Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer

被引:26
作者
Yang, Jun [1 ,2 ]
Tang, Linlong [1 ]
Luo, Wei [1 ]
Feng, Shuanglong [1 ]
Leng, Chongqian [1 ]
Shi, Haofei [1 ]
Wei, Xingzhan [1 ,2 ]
机构
[1] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
silicon/graphene-nanowalls heterojunction; photodetector; interface engineering; diamond-like carbon; interlayer; BROAD-BAND; GRAPHENE PHOTODETECTORS; HIGH RESPONSIVITY; PERFORMANCE; ADHESION;
D O I
10.1021/acsami.0c18850
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon/graphene nanowalls (Si/GNWs) heterojunctions with excellent integrability and sensitivity show an increasing potential in optoelectronic devices. However, the performance is greatly limited by inferior interfacial adhesion and week electronic transport caused by the horizontal buffer layer. Herein, a diamond-like carbon (DLC) interlayer is first introduced to construct Si/DLC/GNWs heterojunctions, which can significantly change the growth behavior of the GNWs film, avoiding the formation of horizontal buffer layers. Accordingly, a robust diamond-like covalent bond with a remarkable enhancement of the interfacial adhesion is yielded, which notably improves the complementary metal oxide semiconductor compatibility for photodetector fabrication. Importantly, the DLC interlayer is verified to undergo a graphitization transition during the high-temperature growth process, which is beneficial to pave a vertical conductive path and facilitate the transport of photogenerated carriers in the visible and near-infrared regions. As a result, the Si/DLC/GNWs heterojunction detectors can simultaneously exhibit improved photoresponsivity and response speed, compared with the counterparts without DLC interlayers. The introduction of the DLC interlayer might provide a universal strategy to construct hybrid interfaces with high performance in next-generation optoelectronic devices.
引用
收藏
页码:4692 / 4702
页数:11
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