Influence of hydrogen-enhanced etching on the quality of diamond films and the existing form of sp2 bonding carbon atoms

被引:7
作者
Ma, BX [1 ]
Yao, N [1 ]
Yang, SE [1 ]
Lu, ZL [1 ]
Fan, ZQ [1 ]
Zhang, BL [1 ]
机构
[1] Zhengzhou Univ, Inst Engn Phys, Zhengzhou 450052, Peoples R China
关键词
chemical vapor deposition; diamond film; Raman spectrum; enhanced etching;
D O I
10.7498/aps.53.2287
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Diamond thin films were prepared by using chemical vapor deposition. It is enhanced to etch the sp(2) bonding carbon atoms of the film by intermittently closing the methane gas during the deposition. These films were characterized by Raman spectroscopy and microscopy. The results show that the enhanced etching of sp(2) bonding carbon atoms has no obvious effect on quality and microstructure of the diamond films. It reveals that the sp(2) bonding carbon atoms do not mainly exist in graphitic or amorphous carbon grain form in the films but mainly among the carbon atoms of diamond grain surface or grain boundary.
引用
收藏
页码:2287 / 2291
页数:5
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