Formation of GaSb/GaAs quantum dots in MOCVD growth

被引：4

作者：

Müller-Kirsch, L

Heitz, R

Pohl, UW

Bimberg, D

Häuster, I

Kirmse, H

Neumann, W

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Humboldt Univ, AG Kristallog, Inst Phys, D-10115 Berlin, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

MOCVD; GaSb; quantum dots;

D O I：

10.1016/S1386-9477(02)00331-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The formation of GaSb quantum dots on a GaAs (0 0 1) substrate under metalorganic chemical vapor deposition conditions is investigated. Transmission electron microscopy images and photoluminescence measurements show the island density to be determined in an initial kinetically controlled phase. Subsequently, mass transfer from the two-dimensional wetting layer sustains the growth of the GaSb quantum dots (QDs). Many-particle effects in the type II QDs are investigated by excitation- and temperature-dependent photoluminescence measurements. The peculiar optical behavior is dominated by Coulomb charging and state filling of the localized holes. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：1181 / 1184

页数：4

相关论文

共 20 条

[1]

Bimberg D., 1999, QUANTUM DOT HETEROST

[2] OPTICAL INVESTIGATION OF THE SELF-ORGANIZED GROWTH OF INAS/GAAS QUANTUM BOXES [J].

GERARD, JM ;

GENIN, JB ;

LEFEBVRE, J ;

MOISON, JM ;

LEBOUCHE, N ;

BARTHE, F .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :351-356

[3] Carrier dynamics in type-II GaSb/GaAs quantum dots [J].

Hatami, F ;

Grundmann, M ;

Ledentsov, NN ;

Heinrichsdorff, F ;

Heitz, R ;

Bohrer, J ;

Bimberg, D ;

Ruvimov, SS ;

Werner, P ;

Ustinov, VM ;

Kop'ev, PS ;

Alferov, ZI .

PHYSICAL REVIEW B, 1998, 57 (08) :4635-4641

[4] Temperature dependent optical properties of self-organized InAs GaAs quantum dots [J].

Heitz, R ;

Mukhametzhanov, I ;

Madhukar, A ;

Hoffmann, A ;

Bimberg, D .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) :520-527

[5] Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs [J].

Heitz, R ;

Ramachandran, TR ;

Kalburge, A ;

Xie, Q ;

Mukhametzhanov, I ;

Chen, P ;

Madhukar, A .

PHYSICAL REVIEW LETTERS, 1997, 78 (21) :4071-4074

[6] Many-body effects on the optical spectra of InAs/GaAs quantum dots [J].

Heitz, R ;

Guffarth, F ;

Mukhametzhanov, I ;

Grundmann, M ;

Madhukar, A ;

Bimberg, D .

PHYSICAL REVIEW B, 2000, 62 (24) :16881-16885

[7] RADIATIVE STATES IN TYPE-II GASB/GAAS QUANTUM-WELLS [J].

LEDENTSOV, NN ;

BOHRER, J ;

BEER, M ;

HEINRICHSDORFF, F ;

GRUNDMANN, M ;

BIMBERG, D .

PHYSICAL REVIEW B, 1995, 52 (19) :14058-14066

[8] NATURE OF STRAINED INAS 3-DIMENSIONAL ISLAND FORMATION AND DISTRIBUTION ON GAAS(100) [J].

MADHUKAR, A ;

XIE, Q ;

CHEN, P ;

KONKAR, A .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2727-2729

[9] Deep level transient capacitance measurements of GaSb self-assembled quantum dots [J].

Magno, R ;

Bennett, BR ;

Glaser, ER .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5843-5849

[10] Temporal evolution of GaSb/GaAs quantum dot formation [J].

Müller-Kirsch, L ;

Heitz, R ;

Pohl, UW ;

Bimberg, D ;

Häusler, I ;

Kirmse, H ;

Neumann, W .

APPLIED PHYSICS LETTERS, 2001, 79 (07) :1027-1029