Coverage dependent dissociation of NO on Rh supported on cerium oxide thin films

被引:23
|
作者
Mullins, DR [1 ]
Overbury, SH [1 ]
机构
[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
关键词
cerium; rhodium; nitrogen oxides; soft X-ray photoelectron spectroscopy; catalysis;
D O I
10.1016/S0039-6028(02)01571-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The decomposition of NO on Rh on oxidized and reduced cerium oxide was studied as a function of NO coverage and temperature by soft X-ray photoelectron spectroscopy. The degree of decomposition is increased and the onset temperature for decomposition is reduced when Rh is supported on reduced ceria (Rh/CeOx) compared to Rh on oxidized ceria (Rh/CeO2). When the initial NO coverage was reduced to 35% of saturation the dissociation activity was enhanced on both Rh/CeO2 and Rh/CeOx. However, at any given temperature and coverage, the dissociation activity was greater on Rh/CeOx. O vacancies on the reduced CeOx were poisoned by exposure to H2O at 300 K to produce a hydroxylated surface. The NO dissociation activity for Rh on the hydroxylated CeOx was the same as that on the open surface. These results demonstrate that O spillover and coverage effects are insufficient to explain the enhanced activity of Rh on reduced CeOx. Published by Elsevier Science B.V.
引用
收藏
页码:L293 / L297
页数:5
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