Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates

被引：58

作者：

Ozaki, Takuya ^{[1
]}

Takagi, Yoshinori ^{[1
]}

Nishinaka, Junichi ^{[1
]}

Funato, Mitsuru ^{[1
]}

Kawakami, Yoichi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 09期

关键词：

ZNO; GROWTH; MOCVD;

D O I：

10.7567/APEX.7.091001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ScAlMgO4 (SCAM) (0001) can be used for metalorganic vapor phase epitaxy (MOVPE) of GaN and lattice-matched In0.17Ga0.83N. GaN grown on SCAM(0001) via a low-temperature GaN buffer layer shows excellent structural quality, indicating that the GaN-SCAM interface is stable during MOVPE. For lattice-matched InGaN on SCAM(0001), a lattice-matched InGaN buffer layer grown at a lower temperature effectively improves the surface and luminescence uniformity. The grown InGaN is nearly unstrained and exhibits photoluminescence peaking at 505 nm at room temperature. These achievements indicate that In0.17Ga0.83N/SCAM lattice-matched templates may pave the way toward longer-wavelength light-emitting and -detecting devices using InGaN with higher In contents. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 21 条

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