β-FeSi2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study

被引:11
作者
Yuan Ji-Ren [1 ,2 ,3 ]
Shen Hong-Lie [2 ]
Zhou Lang [1 ]
Huang Hai-Bin [1 ]
Zhou Nai-Gen [1 ]
Deng Xin-Hua [3 ]
Yu Qi-Ming [3 ]
机构
[1] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R China
[2] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China
[3] Nanchang Univ, Sch Sci, Nanchang 330031, Peoples R China
基金
中国国家自然科学基金;
关键词
beta-FeSi2; solar cell; temperature coefficient; conversion efficiency; OPTICAL-ABSORPTION; PERFORMANCE;
D O I
10.1088/1674-1056/23/3/038801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using beta-FeSi2 as the bottom absorber of triple-junction thin-film solar cells is investigated by a numerical method for widening the long-wave spectral response. The presented results show that the beta-FeSi2 subcell can contribute 0.273 V of open-circuit voltage to the a-Si/mu c-Si/beta-FeSi2 triple-junction thin-film solar cell. The optimized absorber thicknesses for a-Si, mu c-Si, and beta-FeSi2 subcells are 260 nm, 900 nm, and 40 nm, respectively. In addition, the temperature coefficient of the conversion efficiency of the a-Si/mu c-Si/beta-FeSi2 cell is -0.308 %/K, whose absolute value is only greater than that of the a-Si subcell. This result indicates that the a-Si/mu c-Si/beta-FeSi2 triple-junction solar cell has a good temperature coefficient. As a result, using beta-FeSi2 as the bottom absorber can improve the thin-film solar cell performance, and the a-Si/mu c-Si/beta-FeSi2 triple-junction solar cell is a promising structure configuration for improving the solar cell efficiency.
引用
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页数:6
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