Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

被引：157

作者：

Fischer, AJ ^{[1
]}

Allerman, AA ^{[1
]}

Crawford, MH ^{[1
]}

Bogart, KHA ^{[1
]}

Lee, SR ^{[1
]}

Kaplar, RJ ^{[1
]}

Chow, WW ^{[1
]}

Kurtz, SR ^{[1
]}

Fullmer, KW ^{[1
]}

Figiel, JJ ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 17期

关键词：

D O I：

10.1063/1.1728307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet light-emitting diodes (LEDs) have been grown by metalorganic vapor phase epitaxy using AlN nucleation layers and thick n-type Al0.48Ga0.52N current spreading layers. The active region is composed of three Al0.36Ga0.64N quantum wells with Al0.48Ga0.52N barriers for emission at 290 nm. Devices were designed as bottom emitters and flip-chip bonded to thermally conductive submounts using an interdigitated contact geometry. The ratio of quantum well emission to 330 nm sub-band gap emission is as high as 125:1 for these LEDs. Output power as high as 1.34 mW at 300 mA under direct current operation has been demonstrated with a forward voltage of 9.4 V. A peak external quantum efficiency of 0.18% has been measured at an operating current of 55 mA. (C) 2004 American Institute of Physics.

引用

页码：3394 / 3396

页数：3

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