Epitaxial growth of semiconductor thin films on metals in the halogenation process. Atomic structure of copper iodide on the Cu(110) surface

被引：6

作者：

Andryushechkin, B. V. ^{[1
]}

Eltsov, K. N. ^{[1
]}

Cherkez, V. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Ctr Nat Sci, Moscow 119991, Russia

来源：

JETP LETTERS | 2006年 / 83卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S0021364006040072

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The atomic structure of thin (7-20 angstrom) copper iodide layers formed on the Cu(110) surface during a chemical reaction with molecular iodine in ultrahigh vacuum has been.studied with scanning tunneling microscopy. A double stripe superstructure with an average period of 90-100 angstrom was found on the surface of CuI. The structural model is proposed for the copper iodide surface taking into account the contraction of the CuI lattice and the formation of striped domain walls.

引用

页码：162 / 166

页数：5

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