Dimensionality of excitons in stacked van der Waals materials: The example of hexagonal boron nitride

被引：33

作者：

Aggoune, Wahib ^{[1
,2
,3
]}

Cocchi, Caterina ^{[1
,2
,4
]}

Nabok, Dmitrii ^{[1
,2
,4
]}

Rezouali, Karim ^{[3
]}

Belkhir, Mohamed Akli ^{[3
]}

Draxl, Claudia ^{[1
,2
,4
]}

机构：

[1] Humboldt Univ, Inst Phys, Berlin, Germany

[2] Humboldt Univ, IRIS Adlershof, Berlin, Germany

[3] Univ Bejaia, Fac Sci Exactes, Lab Phys Theor, Bejaia 06000, Algeria

[4] ETSF, Liege, Belgium

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 24期

关键词：

OPTICAL-PROPERTIES; INTERLAYER EXCITONS; CHARGE SEPARATION; BAND-GAP; GRAPHENE; DISPERSION; GRAPHITE; MOS2/WS2; CRYSTAL; HETEROSTRUCTURES;

D O I：

10.1103/PhysRevB.97.241114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With the example of hexagonal boron nitride, we demonstrate how the character of electron-hole (e-h) pairs in van derWaals bound low-dimensional systems is driven by layer stacking. Four types of excitons appear, with either a two-or three-dimensional spatial extension. Electron and hole distributions are either overlapping or exhibit a charge-transfer nature. We discuss under which structural and symmetry conditions they appear and they are either dark or bright. This analysis provides the key elements to identify, predict, and possibly tailor the character of e-h pairs in van der Waals materials.

引用

页数：6

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