CdZnS;
chemical bath deposition;
thin films;
structural properties;
LUMINESCENCE;
D O I:
10.1007/s12034-015-1011-z
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Tin (Sn)-doped cadmium zinc sulphide nanoparticles (CdZnS : Sn) were synthesized by the chemical bath deposition method with two different concentrations of Sn (2 and 4 mol%). X-ray diffraction (XRD) pattern reveals the formation of CdZnS nanoparticles with cubic and hexagonal structure. It was observed that the presence of Sn does not alter the structure of CdZnS. Average crystallite size was measured from XRD data by using Scherrer's formula. From the study of absorption spectra, band-to-band absorption was obtained at 460 and 490 nm, respectively, for the Sn-doped (2 and 4 mol%) CdZnS nanoparticles. Energy bandgap for undoped and Sn-doped CdZnS varies from 3.5 to 2.9 eV with error +/- 0.05 eV. The presence of Sn was confirmed by energy-dispersive X-ray analysis. The effect of dopant concentration on the photoluminescence (PL) intensity has also been studied. The PL emission peak has been observed at 540, 550 and 560 nm for the Sn-doped (CdZnS, CdZnS 2 mol% and CdZnS 4 mol%), respectively, nanoparticles. XRD and PL analyses demonstrate that the Sn2+ ions uniformly substitute Cd2+ sites or interstitial sites in CdZnS lattice, which influence the optical properties. Increase in the concentration of Sn shifts the UV-vis absorption spectra and PL emission spectra towards higher wavelength side. Particle size and the crystallinity of CdZnS : Sn nanoparticles were confirmed through atomic force microscopy.
机构:
KARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REPKARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REP
ASCHERON, C
HAASE, C
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KARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REPKARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REP
HAASE, C
KUHN, G
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机构:
KARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REPKARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REP
KUHN, G
NEUMANN, H
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KARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REPKARL MARX UNIV,SEKT CHEM,WISSENSCH BEREICH KRISTALLOG,DDR-7030 LEIPZIG,GER DEM REP
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South Korea
Choi, Hong Goo
Yong, Seok-Min
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South Korea
Yong, Seok-Min
Kim, Do Kyung
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, 291 Daehak Ro, Daejeon 305701, South Korea
Kim, Do Kyung
KOREAN JOURNAL OF MATERIALS RESEARCH,
2012,
22
(07):
: 352
-
357
机构:
Dong Eui Univ, Convergence IT Devices Inst, Busan 614714, South KoreaDong Eui Univ, Convergence IT Devices Inst, Busan 614714, South Korea
Shewale, P. S.
Yu, Y. S.
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机构:
Dong Eui Univ, Convergence IT Devices Inst, Busan 614714, South Korea
Dong Eui Univ, Dept Radiol Sci, Busan 614714, South KoreaDong Eui Univ, Convergence IT Devices Inst, Busan 614714, South Korea
Yu, Y. S.
Kim, J. H.
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机构:
Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 500757, South KoreaDong Eui Univ, Convergence IT Devices Inst, Busan 614714, South Korea
Kim, J. H.
Bobade, C. R.
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机构:
Balwant Coll, Dept Phys, Sangli 415311, MS, IndiaDong Eui Univ, Convergence IT Devices Inst, Busan 614714, South Korea
Bobade, C. R.
Uplane, M. D.
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机构:
Savitribai Phule Pune Univ, Dept Instrumentat Sci, Pune 411007, MS, IndiaDong Eui Univ, Convergence IT Devices Inst, Busan 614714, South Korea
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
Zhou, Yi
Wang, Yanli
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Natl Engn Res Ctr Nanotechnol, Shanghai 200241, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
Wang, Yanli
Wang, Jingfeng
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机构:
Natl Engn Res Ctr Nanotechnol, Shanghai 200241, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
Wang, Jingfeng
Lin, Lin
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Natl Engn Res Ctr Nanotechnol, Shanghai 200241, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
Lin, Lin
Wu, Xiaoyan
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Natl Engn Res Ctr Nanotechnol, Shanghai 200241, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
Wu, Xiaoyan
He, Dannong
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机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
Natl Engn Res Ctr Nanotechnol, Shanghai 200241, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
机构:
National Key Laboratory of Multi-phase Complex Systems,Institute of Process Engineering,CAS
Graduate University of Chinese Academy ofNational Key Laboratory of Multi-phase Complex Systems,Institute of Process Engineering,CAS
赵亮
朱永平
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机构:
National Key Laboratory of Multi-phase Complex Systems,Institute of Process Engineering,CASNational Key Laboratory of Multi-phase Complex Systems,Institute of Process Engineering,CAS