Pulsed KrF excimer laser annealing of silicon solar cell

被引：37

作者：

Azuma, H ^{[1
]}

Takeuchi, A

Ito, T

Fukushima, H

Motohiro, T

Yamaguchi, M

机构：

[1] Toyota Cent Res & Dev Labs Inc, Mat Div 2, Aichi 4801192, Japan

[2] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

excimer laser; laser annealing; silicon film; solar cell; heat-flow simulation; crystalline;

D O I：

10.1016/S0927-0248(02)00087-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in recrystallization depth of 0.7 mum for microcrystalline silicon (EBEP-CVD) and 0.4 mum for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：289 / 294

页数：6

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