Near edge X-ray absorption fine structure spectroscopy of chemically modified porous silicon

被引：21
作者：
Hu, YF
Boukherroub, R
Sham, TK
机构：
[1] Univ Saskatchewan, Canadian Light Source Inc, Saskatoon, SK S7N 0X4, Canada
[2] Ecole Polytech, Lab Phys Mat Condensee, F-91128 Palaiseau, France
[3] Univ Western Ontario, Dept Chem, London, ON N6A 5B7, Canada
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2004年 / 135卷 / 2-3期
基金：
美国国家科学基金会;
关键词：
X-ray absorption spectroscopy; porous silicon; organic monolayer; NEXAFS;
D O I：
10.1016/j.elspec.2004.02.162
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The organic modification of porous silicon (PSi) has been studied by near edge X-ray absorption tine structures (NEXAFS) spectroscopy. We report the NEXAFS studies of a series of the PSi films modified by organic monolayers, covalently attached to the surface via Si-C and Si-O-C bonds. The C, O, and Si K-edge, and Si L-3,L-2-edge NEXAFS of these PSi films, measured in both the surface sensitive total electron yield (TEY) and the interface and bulk sensitive fluorescence yield (FLY) show that the surface Si-C and Si-O-C bonds are indeed present and that the remaining of the capping molecule remains intact. The results are reported and their implications discussed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：143 / 147
页数：5
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