Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation

被引:14
作者
Zhu, Yonggang [1 ]
Zhang, Xinhui [1 ]
Li, Tao [1 ]
Chen, Lin [1 ]
Lu, Jun [1 ]
Zhao, Jianhua [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
Curie temperature; ferromagnetic materials; gallium compounds; Kerr magneto-optical effect; magnetic relaxation; magnetic thin films; manganese compounds; semimagnetic semiconductors; spin dynamics; time resolved spectra; SPINTRONICS; GAAS;
D O I
10.1063/1.3116716
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spin dynamics in (Ga,Mn)As films grown on GaAs(001) was investigated by Time-resolved magneto-optical Kerr effect. The Kerr signal decay time of (Ga,Mn)As without external magnetic field applied was found to be several hundreds picoseconds, which suggested that photogenerated polarized holes and magnetic ions are coupled as a ferromagnetic system. Nonmonotonic temperature dependence of relaxation and dephasing (R&D) time and Larmor frequency manifests that Bir-Aronov-Pikus mechanism dominates the spin R&D time at low temperature, while D'yakonov-Perel mechanism dominates the spin R&D time at high temperature, and the crossover between the two regimes is Curie temperature.
引用
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页数:3
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