Origin of Stokes shift in InAs and CdSe quantum dots: Exchange splitting of excitonic states

被引：33

作者：

Bagga, Anjana ^{[1
]}

Chattopadhyay, P. K.

Ghosh, Subhasis

机构：

[1] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India

[2] Maharshi Dayanand Univ, Dept Phys, Rohtak 124001, Haryana, India

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.74.035341

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mechanism of Stokes shift in semiconductor quantum dots is investigated by calculating the energy of the excitonic states. We have taken into account all possible contributions to the total electronic energy in the dot-i.e., the dielectric mismatch between the dot and surrounding medium, the effects of finite barrier height, and the electron-hole exchange interaction. The Stokes shift is calculated as a function of radius of dot and compared with experimental data on two different semiconductor based quantum dots. These results provide evidence for an exchange splitting of excitonic states, as the mechanism of Stokes shift in quantum dots.

引用

页数：7

共 20 条

[1] Dark and bright excitonic states in nitride quantum dots [J].

Bagga, A ;

Chattopadhyay, PK ;

Ghosh, S .

PHYSICAL REVIEW B, 2005, 71 (11)

[2] Energy levels of nitride quantum dots: Wurtzite versus zinc-blende structure [J].

Bagga, A ;

Chattopadhyay, PK ;

Ghosh, S .

PHYSICAL REVIEW B, 2003, 68 (15)

[3] Role of electronic versus atomic relaxations in Stokes shifts at defects in solids [J].

Bakos, T ;

Rashkeev, SN ;

Pantelides, ST .

PHYSICAL REVIEW LETTERS, 2003, 91 (22)

[4] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709

[5] Exchange interaction in InAs nanocrystal quantum dots [J].

Banin, U ;

Lee, JC ;

Guzelian, AA ;

Kadavanich, AV ;

Alivisatos, AP .

SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (04) :559-567

[6] A SIMPLE-MODEL FOR THE IONIZATION-POTENTIAL, ELECTRON-AFFINITY, AND AQUEOUS REDOX POTENTIALS OF SMALL SEMICONDUCTOR CRYSTALLITES [J].

BRUS, LE .

JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (11) :5566-5571

[7] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].

CALCOTT, PDJ ;

NASH, KJ ;

CANHAM, LT ;

KANE, MJ ;

BRUMHEAD, D .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98

[8] SPECTROSCOPIC IDENTIFICATION OF THE LUMINESCENCE MECHANISM OF HIGHLY POROUS SILICON [J].

CALCOTT, PDJ ;

NASH, KJ ;

CANHAM, LT ;

KANE, MJ ;

BRUMHEAD, D .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :257-269

[9] LUMINESCENCE POLARIZATION OF CDSE MICROCRYSTALS [J].

EFROS, AL .

PHYSICAL REVIEW B, 1992, 46 (12) :7448-7458

[10] Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states [J].

Efros, AL ;

Rosen, M ;

Kuno, M ;

Nirmal, M ;

Norris, DJ ;

Bawendi, M .

PHYSICAL REVIEW B, 1996, 54 (07) :4843-4856

← 1 2 →