Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes

被引：22

作者：

Illarionov, Yu. Yu. ^{[1
,2
,3
]}

Vexler, M. I. ^{[2
]}

Fedorov, V. V. ^{[2
]}

Suturin, S. M. ^{[2
]}

Sokolov, N. S. ^{[2
]}

机构：

[1] Singapore Inst Mfg Technol, Singapore 638075, Singapore

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] TU Vienna, Inst Microelect, A-1040 Vienna, Austria

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 22期

关键词：

VOLTAIC ENERGY-CONVERSION; EPITAXIAL-GROWTH; OXIDE THICKNESS; LIGHT-EMISSION; SILICON; SYSTEM; MODEL; MBE;

D O I：

10.1063/1.4882375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal/CaF2/p-Si(111) capacitors with the improved-quality several-nanometer-thick epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for barrier layers in silicon devices. Structural and transport properties of a thin crystalline dielectric are characterized by different experimental techniques. The measured current-voltage characteristics accompanied with simulation results demonstrate that the elastic tunneling electron injection takes place in the considered structures. The same result follows from the behavior of hot-electron-injection-related electroluminescence within the selected spectral intervals. The result is important considering a perspective of using the epitaxial fluorides as barrier layers in resonant tunneling diodes. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 25 条

[1] Threshold energies in the light emission characteristics of silicon MOS tunnel diodes [J].

Asli, N ;

Vexler, MI ;

Shulekin, AF ;

Yoder, PD ;

Grekhov, IV ;

Seegebrecht, P .

MICROELECTRONICS RELIABILITY, 2001, 41 (07) :1071-1076

[2] HOT-CARRIER LUMINESCENCE IN SI [J].

BUDE, J ;

SANO, N ;

YOSHII, A .

PHYSICAL REVIEW B, 1992, 45 (11) :5848-5856

[3] Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions [J].

Cartier, E ;

Tsang, JC ;

Fischetti, MV ;

Buchanan, DA .

MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) :103-106

[4] Structural transitions and relaxation processes during the epitaxial growth of ultrathin CaF2 films on Si(111) [J].

Deiter, Carsten ;

Bierkandt, Markus ;

Klust, Andreas ;

Kumpf, Christian ;

Su, Yixi ;

Bunk, Oliver ;

Feidenhans'l, Robert ;

Wollschlaeger, Joachim .

PHYSICAL REVIEW B, 2010, 82 (08)

[5]

Ding Y., 2012, 19 IEEE INT S PHYS F, P1, DOI DOI 10.1109/AGRO-GEOINFORMATICS.2012.6311662

[6] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[7]

Hayes W., 1974, CRYSTALS FLUORITE ST

[8] Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors [J].

Henson, WK ;

Ahmed, KZ ;

Vogel, EM ;

Hauser, JR ;

Wortman, JJ ;

Venables, RD ;

Xu, M ;

Venables, D .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) :179-181

[9] Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2 nm) fluoride layer [J].

Illarionov, Yu. Yu. ;

Vexler, M. I. ;

Fedorov, V. V. ;

Suturin, S. M. ;

Sokolov, N. S. .

THIN SOLID FILMS, 2013, 545 :580-583

[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

← 1 2 3 →