Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

被引：43

作者：

Nakamura, Eiji ^{[1
]}

Ueno, Kohei ^{[1
]}

Ohta, Jitsuo ^{[2
]}

Fujioka, Hiroshi ^{[1
,2
,3
]}

Oshima, Masaharu ^{[1
,3
]}

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

关键词：

GAN; EPITAXY;

D O I：

10.1063/1.4864283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-type doping of GaN by pulsed sputtering deposition (PSD) at a low growth temperature of 480 degrees C and dramatic reduction in the growth process temperature for InGaN-based light-emitting diodes (LEDs) were achieved. Mg-doped GaN layers grown on semi-insulating GaN at 480 degrees C exhibited clear p-type conductivity with a hole concentration and mobility of 3.0 x 10(17) cm(-3) and 3.1 cm(2) V-1 s(-1), respectively. GaN/In0.33Ga0.67N/GaN LEDs fabricated at 480 degrees C showed clear rectifying characteristics and a bright electroluminescence emission near 640 nm. These results indicate that this low temperature PSD growth technique is quite promising for the production of nitride-based light-emitting devices on large-area glass substrates. (C) 2014 AIP Publishing LLC.

引用

页数：3

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