Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon Carbide

被引：0

作者：

White, Alexander D. ^{[1
]}

Lukin, Daniil M. ^{[1
]}

Guidry, Melissa A. ^{[1
]}

Trivedi, Rahul ^{[1
]}

Morioka, Naoya ^{[2
,3
]}

Babin, Charles ^{[2
,3
]}

Kaiser, Florian ^{[2
,3
]}

Ul-Hassan, Jawad ^{[4
]}

Son, Nguyen Tien ^{[4
]}

Ohshima, Takeshi ^{[5
]}

Vasireddy, Praful ^{[6
]}

Nasr, Mamdouh ^{[6
]}

Nanni, Emilio ^{[6
]}

Wrachtrup, Jorg ^{[2
,3
]}

Vuckovic, Jelena ^{[1
]}

机构：

[1] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA

[2] Univ Stuttgart, Inst Phys 3, D-70569 Stuttgart, Germany

[3] Inst Quantum Sci & Technol IQST, D-70569 Stuttgart, Germany

[4] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[5] Natl Inst Quantum & Radiol Sci & Technol, Takasaki, Gumma 3701292, Japan

[6] SLAC Natl Accelerator Lab, 2575 Sand Hill Rd, Menlo Pk, CA 94025 USA

来源：

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the DC Stark tuning of single Silicon Vacancies in SiC. We demonstrate static tuning across 200 GHz, exceeding the inhomogenous broadening, and dynamic tuning on timescales shorter than the optical decay rate. (C) 2020 The Author(s)

引用

页数：2

共 7 条

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