High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

被引：31

作者：

Lo, M. H. ^{[1
,2
]}

Tu, P. M. ^{[1
,2
]}

Wang, C. H. ^{[1
,2
]}

Hung, C. W. ^{[1
,2
]}

Hsu, S. C. ^{[3
]}

Cheng, Y. J. ^{[1
,2
,3
]}

Kuo, H. C. ^{[1
,2
]}

Zan, H. W. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

Chang, C. Y. ^{[4
]}

Huang, S. C. ^{[5
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[5] Adv Optoelect Technol Inc, Hsinchu 303, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期

关键词：

dislocations; electroluminescent devices; etching; gallium compounds; III-V semiconductors; light emitting diodes; sapphire; wide band gap semiconductors; PATTERNED SAPPHIRE; LAYERS;

D O I：

10.1063/1.3190504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.

引用

页数：3

共 12 条

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