A 140-GHz fundamental mode voltage-controlled oscillator in 90-nm CMOS technology

被引：40

作者：

Cao, Changhua ^{[1
]}

Kenneth, K. O. ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Silicon Microwave Integrated Circuits & Syst Res, Gainesville, FL 32611 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 10期

关键词：

complementary metal oxide silicon (CMOS); millimeter-wave; voltage-controlled oscillator (VCO);

D O I：

10.1109/LMWC.2006.882385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fundamental mode voltage-controlled oscillators in F-band (90-140 GHz) were fabricated using the UMC 90-nm logic CMOS process. The maximum operating frequencies of these three oscillators are 110, 123, and 140 GHz, respectively. The 140-GHz voltage controlled oscillator provides -22 to -19-dBm output power, a frequency tuning range of 1.2 GHz and phase noise of -85 dBc/Hz at 2-MHz offset from the carrier, while consuming 8 mA from a 1.2-V supply.

引用

页码：555 / 557

页数：3

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