The triangular pits eliminate of (11(2)over-bar0) a-plane GaN growth by metal-orgamic chemical vapor deposition

被引：5

作者：

Xu Sheng-Rui ^{[1
]}

Zhang Jin-Cheng ^{[1
]}

Li Zhi-Ming ^{[1
]}

Zhou Xiao-Wei ^{[1
]}

Xu Zhi-Hao ^{[1
]}

Zhao Guang-Cai ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Minist Educ, Xian 710071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 08期

关键词：

GaN; AFM; HRXRD; nonpolar;

D O I：

10.7498/aps.58.5705

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nonpolar a-plane (11 (2) over bar0) GaN has been grown on r-plane (1 (1) over bar 02) sapphire by metal-orgamic chemical vapor deposition. The crystal quality has been greatly improved by using the AlGaN multiple-quantum-well interlayers. The surface morphology and the crystal quality were investigated by high resolution X-ray diffraction and atomic force microscopy. The triangular pits were eliminated completely. The precession of the X-ray diffraction symmetric reflection peak full with width at half maximum of (11 (2) over tilde0) is 680 ''.

引用

页码：5705 / 5708

页数：4

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