An efficient analytical approach for extracting the emitter inductance of collector-up HBTs

被引：6

作者：

Tseng, HC ^{[1
]}

Chou, JH ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Engn Sci, Syst Integrat Lab, Tainan 70101, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 07期

关键词：

heterojunction bipolar transistors (HBTs); parameter extraction; semiconductor device modeling;

D O I：

10.1109/TED.2004.829899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient analytical parameter-extraction approach for the emitter inductance in a hybrid-pi equivalent circuit of collector-up hetero-junction bipolar transistors (HBTs) is developed for the first time. A full set of elements is derived unambiguously from impedance and admittance formulation. The good agreement between measured and simulated S-parameters ensures the accuracy of this method.

引用

页码：1200 / 1202

页数：3

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