An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics

被引：38

作者：

Pavanello, MA ^{[1
]}

Martino, JA

Dessard, V

Flandre, D

机构：

[1] Univ Sao Paulo, Lab Sistemas Integraveis, BR-05508900 Sao Paulo, Brazil

[2] Catholic Univ Louvain, Microelect Lab, B-1348 Louvain, Belgium

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 01期

关键词：

D O I：

10.1149/1.1390955

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A device based on an asymmetric channel doping profile with the aim of reducing the inherent parasitic bipolar effects in fully depleted silicon-on-insulator (SOI) devices and improving the output characteristics is introduced. Measurements and two-dimensional simulations are used to study the device capabilities and limitations. (C) 1999 The Electrochemical Society. S1099-0062(99)07-087-X. All rights reserved.

引用

页码：50 / 52

页数：3

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