Fabrication and Analysis of a Si/Si0.55Ge0.45 Heterojunction Line Tunnel FET

被引：118

作者：

Walke, Amey M. ^{[1
,3
]}

Vandooren, Anne ^{[1
]}

Rooyackers, Rita ^{[1
]}

Leonelli, Daniele ^{[1
]}

Hikavyy, Andriy ^{[1
]}

Loo, Roger ^{[1
]}

Verhulst, Anne S. ^{[1
]}

Kao, Kuo-Hsing ^{[1
]}

Huyghebaert, Cedric ^{[1
]}

Groeseneken, Guido ^{[1
,2
]}

Rao, Valipe Ramgopal ^{[3
]}

Bhuwalka, Krishna K. ^{[1
]}

Heyns, Marc M. ^{[1
,4
]}

Collaert, Nadine ^{[1
]}

Thean, Aaron Voon-Yew ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[3] Indian Inst Technol, Dept Elect Engn, Ctr Excellence Nano Technol, Bombay 400076, Maharashtra, India

[4] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 03期

关键词：

Field-induced quantum confinement (FIQC); FIQC effect; gate length and width dependence; line tunneling; TFET fabrication; TFET simulations; TFET variability; tunnel field effect transistor (TFET); STRAIN;

D O I：

10.1109/TED.2014.2299337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new integration scheme to fabricate a Si/Si0.55Ge0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an increase in tunneling current with gate length. The 1-mu m gate length device shows ON current in excess of 20 mu A/mu m at V-GS = V-DS = 1.2 V. Low-temperature measurements, performed to suppress trap-assisted tunneling (TAT), reveal the point subthreshold swing as low as 22 mV/dec at 78 K. Field-induced quantum confinement effects are found to increase the tunneling onset voltage by similar to 0.35 V. Variation of the tunneling onset voltage measured experimentally is correlated to variation in the pocket thickness and its doping concentration. Small geometry devices were found to be more susceptible to microvariations in the pocket thickness and doping concentration.

引用

页码：707 / 715

页数：9

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