Protocrystalline Silicon for Micromorph Tandem Cells on Gen. 5 Size

被引:1
作者
van Elzakker, Gijs [1 ]
Sixtensson, Daniel [1 ]
Papathanasiou, Niklas [1 ]
Neubeck, Klaus [1 ]
Sillmann, Roland [1 ]
机构
[1] Inventux Technol AG, Wolfener Str 23, D-12681 Berlin, Germany
来源
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010 | 2010年 / 1245卷
关键词
D O I
10.1557/PROC-1245-A01-03
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Inventux Technologies AG is a high volume producer of Micromorph (a-Si: H/mu c-Si: H) tandem modules. The light-induced degradation of hydrogenated amorphous silicon (a-Si: H), called Staebler-Wronski effect (SWE), limits the stabilized efficiency of a-Si: H-based solar cells. Several laboratories have reported on the development of a-Si: H with increased resistance against light-soaking. This so-called 'protocrystalline' silicon can be grown with plasma-enhanced chemical vapor deposition (PECVD) by diluting the silane source gas with hydrogen. The aim of the work presented in this paper was to scale-up the laboratory results on protocrystalline silicon to a size of 1.43 m(2) (Gen. 5) using a process that is suitable for high volume production. We demonstrate that the strict boundary conditions regarding uniformity and growth rate, which are necessary for a production process, can be met. The reduced light-induced degradation of protocrystalline solar cells fabricated with the newly developed process is confirmed by a light-soaking experiment. As an outlook towards future work, we discuss issues related to the implementation of a protocrystalline top cell in the Micromorph tandem configuration. The challenge of choosing the right top-cell thickness is illustrated by experimental results on two tandem cells. The top cells of these tandems contain protocrystalline i-layers of different thicknesses.
引用
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页码:25 / 30
页数:6
相关论文
共 3 条
[1]   THICKNESS DEPENDENCE OF LIGHT-INDUCED EFFECTS IN A-SI SOLAR-CELLS [J].
CHAUDHURI, P ;
RAY, S ;
BATABYAL, AK ;
BARUA, AK .
SOLAR CELLS, 1991, 31 (01) :13-21
[2]   Structural Properties of a-Si:H Films With Improved Stability Against Light Induced Degradation [J].
van Elzakker, G. ;
Sutta, P. ;
Zeman, M. .
AMORPHOUS AND POLYCRYSTALLINE THIN FILM SILICON SCIENCE AND TECHNOLOGY - 2009, VOL 1153, 2009, 1153
[3]  
YANG LY, 1994, MATER RES SOC SYMP P, V336, P669, DOI 10.1557/PROC-336-669