Ferromagnetism in GaAs structures with Mn-delta-doped layers

被引：23

作者：

Vikhrova, O. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Dorokhin, M. V. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Kalent'eva, I. L.

Kudrin, A. V. ^{[1
]}

机构：

[1] Nizhnii Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2009年 / 35卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

75.50.Pp; 75.47.-m;

D O I：

10.1134/S1063785009070165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is established that GaAs-based semiconductor heterostructures containing a single layer delta-doped with manganese, obtained by combining the methods of metalorganic chemical vapor deposition (MOCVD) in a hydride system and laser ablation of solid targets in a common technological cycle, possess ferromagnetic properties. The structures demonstrate nonlinear magnetic-field dependences of the Hall resistance with a hysteresis (at a coercivity of about 80 Oe) and show a negative magnetoresistance (up to 4% in a magnetic field of 3000 Oe) at temperatures below the Curie point (T (C) a parts per thousand 30 K).

引用

页码：643 / 646

页数：4

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