NOVEL STRUCTURES FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS

被引：3
|
作者：
Faez, Rahim [2 ]
Hosseini, Seyed Ebrahim [1 ]
机构：
[1] Tarbiat Moallem Univ Sabzevar, Dept Elect Engn, Sabzevar, Iran
[2] Sharif Univ Technol, Fac Elect Engn, Tehran, Iran
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2009年 / 23卷 / 19期
关键词：
Carbon nanotube; FET; simulation; Schrodinger equation; CNT; TRANSPORT;
D O I：
10.1142/S0217979209052911
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A carbon nanotube field effect transistor (CNTFET) has been studied based on the Schrodinger-Poisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (V ds) can be used, which results in higher output power. In the digital circuits, higher V ds increases noise immunity.
引用
收藏
页码：3669 / 3678
页数：10
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