Spectroscopic second-harmonic generation from silicon-on-insulator wafers

被引：6
|
作者：
Pedersen, Kjeld [1 ]
Pedersen, Thomas Garm [1 ]
机构：
[1] Aalborg Univ, Dept Phys & Nanotechnol, DK-9220 Aalborg, Denmark
来源：
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2009年 / 26卷 / 05期
关键词：
SI/SIO2; INTERFACES;
D O I：
10.1364/JOSAB.26.000917
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Optical second-harmonic generation from a silicon-on-insulator wafer has been investigated over a broad spectral region. The nonlinear signal shows oscillations with wavelengths that depend on the angle of incidence. A number of characteristic structures are caused by linear multiple reflections in the layered structure at the fundamental and second-harmonic wavelengths. Furthermore, an interference between signals generated by second-harmonic sources at different interfaces appears. Possibilities for isolating signals from buried interfaces through variations of pump wavelength and angle of incidence are discussed. (C) 2009 Optical Society of America
引用
收藏
页码：917 / 922
页数：6
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