Review-Ultra-Wide-Bandgap AlGaN Power Electronic Devices

被引：127

作者：

Kaplar, R. J. ^{[1
]}

Allerman, A. A. ^{[1
]}

Armstrong, A. M. ^{[1
]}

Crawford, M. H. ^{[1
]}

Dickerson, J. R. ^{[1
]}

Fischer, A. J. ^{[1
]}

Baca, A. G. ^{[1
]}

Douglas, E. A. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 02期

关键词：

MOBILITY TRANSISTORS; GAN; SUBSTRATE; HEMTS; SEMICONDUCTORS; PASSIVATION; OPERATION; DIODES;

D O I：

10.1149/2.0111702jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

"Ultra" wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (E-G > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical-and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications. (C) The Author(s) 2016. Published by ECS.

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收藏

页码：Q3061 / Q3066

页数：6

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