Photoemission from the valence bands of Ce(111) on W(110)

被引：3
作者：
Morimoto, O. [1 ]
Kato, H. [2 ]
Enta, Y. [2 ]
Sakisaka, Y. [2 ]
机构：
[1] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan
[2] Hirosaki Univ, Fac Sci & Technol, Hirosaki, Aomori 0368561, Japan
来源：
SURFACE SCIENCE | 2009年 / 603卷 / 13期
关键词：
Cerium; Tungsten; Photoelectron spectroscopy; Valence band; SURFACE-ELECTRONIC-STRUCTURE; ANGLE-RESOLVED PHOTOEMISSION; ALPHA-GAMMA TRANSITION; LOW-ENERGY EXCITATIONS; CE COMPOUNDS; PHASE-TRANSITION; LANTHANIDE METALS; IMPURITY MODEL; KONDO SYSTEMS; EPITAXIAL CE;
D O I：
10.1016/j.susc.2009.04.019
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report a photoelectron spectroscopic study of the valence bands of epitaxial Ce(1 1 1) films grown on W(1 1 0) at room temperature. The evolution of gamma -> alpha -> gamma like phase transition of Ce is observed with increasing Ce coverage and the valence-band structures of gamma-like Ce film are determined. The 4f and 5d photoemission cross sections in the photon energy region from 20 eV to 130 eV are presented and discussed. A 5d-like surface state and a 6s band bottom are identified. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：2145 / 2151
页数：7
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