A numerical investigation of the effect of thermoelectromagnetic convection (TEMC) on the Bridgman growth of Ge1-xSix

被引:52
作者
Yesilyurt, S
Vujisic, L
Motakef, S
Szofran, FR
Volz, MP
机构
[1] Cape Simulat Inc, Newton, MA 02458 USA
[2] NASA, George C Marshall Space Flight Ctr, Huntsville, AL 35812 USA
基金
美国国家航空航天局;
关键词
thermoelectromagnetic convection; Bridgman growth; GeSi;
D O I
10.1016/S0022-0248(99)00377-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Thermoelectric currents at the growth interface of GeSi during Bridgman growth are shown to promote convection when a low-intensity axial magnetic field is applied. TEMC, typically, is characterized by a meridional flow driven by the rotation of the fluid; meridional convection alters the composition of the melt. and shape of the growth interface substantially. TEMC effect is more important in micro-gravity environment than the terrestrial one, and can be used to control convection during directional solidification of GeSi. Tn this work, we report on the numerical simulation of the effect of TEMC on the growth of GeSi. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:278 / 291
页数:14
相关论文
共 17 条
[1]   CONVECTION AND SEGREGATION IN DIRECTIONAL SOLIDIFICATION OF DILUTE AND NON-DILUTE BINARY-ALLOYS - EFFECTS OF AMPOULE AND FURNACE DESIGN [J].
ADORNATO, PM ;
BROWN, RA .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :155-190
[2]   SINGLE-CRYSTAL GROWTH WITH THE CZOCHRALSKI METHOD INVOLVING ROTATIONAL ELECTROMAGNETIC STIRRING OF THE MELT [J].
BRUCKNER, FU ;
SCHWERDTFEGER, K .
JOURNAL OF CRYSTAL GROWTH, 1994, 139 (3-4) :351-356
[3]   Floating-zone growth of silicon in magnetic fields - II. Strong static axial fields [J].
Croll, A ;
Szofran, FR ;
Dold, P ;
Benz, KW ;
Lehoczky, SL .
JOURNAL OF CRYSTAL GROWTH, 1998, 183 (04) :554-563
[4]   BRIDGMAN AND CZOCHRALSKI GROWTH OF GE-SI ALLOY CRYSTALS [J].
DAHLEN, A ;
FATTAH, A ;
HANKE, G ;
KARTHAUS, E .
CRYSTAL RESEARCH AND TECHNOLOGY, 1994, 29 (02) :187-198
[5]   Modification of fluid flow and heat transport in vertical Bridgman configurations by rotating magnetic fields [J].
Dold, P ;
Benz, KW .
CRYSTAL RESEARCH AND TECHNOLOGY, 1997, 32 (01) :51-60
[6]  
Flemings M., 1974, The solidification processing
[7]  
GELFGAT YM, 1994, P 45 C INT ASTR FED
[8]  
GORBUNOV LA, 1992, P 1 INT S HYDR HEAT
[9]  
HOSHIKAWA K, 1982, JPN J APPL PHYS, V21, P9
[10]   Thermoelectric magnetohydrodynamic effects during Bridgman semiconductor crystal growth with a uniform axial magnetic field [J].
Khine, YY ;
Walker, JS .
JOURNAL OF CRYSTAL GROWTH, 1998, 183 (1-2) :150-158