Tuning Hydrogen Adsorption on Graphene by Gate Voltage

被引：20
作者：
Murata, Yuya [1 ]
Calzolari, Arrigo [2 ]
Heun, Stefan [1 ]
机构：
[1] CNR, Ist Nanosci, NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[2] Scuola Normale Super Pisa, Piazza San Silvestro 12, I-56127 Pisa, Italy
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2018年 / 122卷 / 21期
基金：
欧盟地平线“2020”;
关键词：
ATOMIC-HYDROGEN; REACTIVITY; MECHANISM; STORAGE; SURFACE; H-2;
D O I：
10.1021/acs.jpcc.8b03627
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
To realize applications of hydrogen-adsorbed graphene, a main issue is how to control hydrogen adsorption/desorption at room temperature. In this study, we demonstrate the possibility to tune hydrogen adsorption on graphene by applying a gate voltage. The influence of the gate voltage on graphene and its hydrogen adsorption properties was investigated by electrical transport measurements, scanning tunneling microscopy, and density functional theory calculations. We show that more hydrogen adsorbs on graphene with negative gate voltage (p-type doping), compared to that without gate voltage or positive gate voltage (n-type doping). Theoretical calculations explain the gate voltage dependence of hydrogen adsorption as modifications of the adsorption energy and diffusion barrier of hydrogen on graphene by charge doping.
引用
收藏
页码：11591 / 11597
页数：7
相关论文
共 44 条
[1]   Electric field: A catalyst for hydrogenation of graphene [J].
Ao, Z. M. ;
Peeters, F. M. .
APPLIED PHYSICS LETTERS, 2010, 96 (25)
[2]   Measurement of topological Berry phase in highly disordered graphene [J].
Bennaceur, K. ;
Guillemette, J. ;
Levesque, P. L. ;
Cottenye, N. ;
Mahvash, F. ;
Hemsworth, N. ;
Kumar, Abhishek ;
Murata, Y. ;
Heun, S. ;
Goerbig, M. O. ;
Proust, C. ;
Siaj, M. ;
Martel, R. ;
Gervais, G. ;
Szkopek, T. .
PHYSICAL REVIEW B, 2015, 92 (12)
[3]   van der Waals forces in density functional theory: a review of the vdW-DF method [J].
Berland, Kristian ;
Cooper, Valentino R. ;
Lee, Kyuho ;
Schroeder, Elsebeth ;
Thonhauser, T. ;
Hyldgaard, Per ;
Lundqvist, Bengt I. .
REPORTS ON PROGRESS IN PHYSICS, 2015, 78 (06)
[4]   Influence of Electric Field in the Adsorption of Atomic Hydrogen on Graphene [J].
Cab, C. ;
Medina-Esquivel, R. ;
Acosta, C. ;
Mendez-Gamboa, J. ;
Penunuri, F. ;
Tapia, A. .
ADVANCES IN CONDENSED MATTER PHYSICS, 2015, 2015
[5]  
Chen S., 2011, NEW J PHYS, V12
[6]   Chemical Reactivity of Electron-Doped and Hole-Doped Graphene [J].
Denis, Pablo A. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (08) :3895-3902
[7]   Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2 [J].
Geringer, V. ;
Liebmann, M. ;
Echtermeyer, T. ;
Runte, S. ;
Schmidt, M. ;
Rueckamp, R. ;
Lemme, M. C. ;
Morgenstern, M. .
PHYSICAL REVIEW LETTERS, 2009, 102 (07)
[8]   QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials [J].
Giannozzi, Paolo ;
Baroni, Stefano ;
Bonini, Nicola ;
Calandra, Matteo ;
Car, Roberto ;
Cavazzoni, Carlo ;
Ceresoli, Davide ;
Chiarotti, Guido L. ;
Cococcioni, Matteo ;
Dabo, Ismaila ;
Dal Corso, Andrea ;
de Gironcoli, Stefano ;
Fabris, Stefano ;
Fratesi, Guido ;
Gebauer, Ralph ;
Gerstmann, Uwe ;
Gougoussis, Christos ;
Kokalj, Anton ;
Lazzeri, Michele ;
Martin-Samos, Layla ;
Marzari, Nicola ;
Mauri, Francesco ;
Mazzarello, Riccardo ;
Paolini, Stefano ;
Pasquarello, Alfredo ;
Paulatto, Lorenzo ;
Sbraccia, Carlo ;
Scandolo, Sandro ;
Sclauzero, Gabriele ;
Seitsonen, Ari P. ;
Smogunov, Alexander ;
Umari, Paolo ;
Wentzcovitch, Renata M. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (39)
[9]   Influence of Graphene Curvature on Hydrogen Adsorption: Toward Hydrogen Storage Devices [J].
Goler, Sarah ;
Coletti, Camilla ;
Tozzini, Valentina ;
Piazza, Vincenzo ;
Mashoff, Torge ;
Beltram, Fabio ;
Pellegrini, Vittorio ;
Heun, Stefan .
JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (22) :11506-11513
[10]   Vibrational properties and diffusion of hydrogen on graphene [J].
Herrero, Carlos P. ;
Ramirez, Rafael .
PHYSICAL REVIEW B, 2009, 79 (11)
12345