Origin of carrier scattering in polycrystalline Al-doped ZnO films

被引：36

作者：

Jia, Junjun ^{[1
]}

Oka, Nobuto ^{[1
]}

Kusayanagi, Minehide ^{[1
]}

Nakatomi, Satoshi ^{[1
]}

Shigesato, Yuzo ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Sagamihara, Kanagawa 2525258, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

关键词：

TRANSPORT-PROPERTIES; INDIUM OXIDE; TRANSPARENT;

D O I：

10.7567/APEX.7.105802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 x 10(19) to 1.1 x 10(21) cm(-3). A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 x 10(20) cm(-3). A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of x 10(20) cm(-3). The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 27 条

[1] High field electron transport properties of bulk ZnO [J].

Albrecht, JD ;

Ruden, PP ;

Limpijumnong, S ;

Lambrecht, WRL ;

Brennan, KF .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :6864-6867

[2] Electrical transport parameters of heavily-doped zinc oxide and zinc magnesium oxide single and multilayer films heteroepitaxially grown on oxide single crystals [J].

Ellmer, K ;

Vollweiler, G .

THIN SOLID FILMS, 2006, 496 (01) :104-111

[3] Carrier transport in polycrystalline ITO and ZnO:Al II:: The influence of grain barriers and boundaries [J].

Ellmer, Klaus ;

Mientus, Rainald .

THIN SOLID FILMS, 2008, 516 (17) :5829-5835

[4] Al-doped ZnO (AZO) films deposited by reactive sputtering with unipolar-pulsing and plasma-emission control systems [J].

Hirohata, Kento ;

Nishi, Yasutaka ;

Tsukamoto, Naoki ;

Oka, Nobuto ;

Sato, Yasushi ;

Yamamoto, Isao ;

Shigesato, Yuzo .

THIN SOLID FILMS, 2010, 518 (11) :2980-2983

[5] Oxygen vacancies in ZnO [J].

Janotti, A ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3

[6] Native point defects in ZnO [J].

Janotti, Anderson ;

Van de Walle, Chris G. .

PHYSICAL REVIEW B, 2007, 76 (16)

[7] Hydrogen multicentre bonds [J].

Janotti, Anderson ;

Van de Walle, Chris G. .

NATURE MATERIALS, 2007, 6 (01) :44-47

[8] Parameterization of the optical functions of amorphous materials in the interband region [J].

Jellison, GE ;

Modine, FA .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :371-373

[9] Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films [J].

Jia, Junjun ;

Takasaki, Aiko ;

Oka, Nobuto ;

Shigesato, Yuzo .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (01)

[10] Structural, electrical, and optical properties of hydrogen-doped ZnO films [J].

Kronenberger, Achim ;

Polity, Angelika ;

Hofmann, Detlev M. ;

Meyer, Bruno K. ;

Schleife, Andre ;

Bechstedt, Friedhelm .

PHYSICAL REVIEW B, 2012, 86 (11)

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