Origin of carrier scattering in polycrystalline Al-doped ZnO films

被引：35

作者：

Jia, Junjun ^{[1
]}

Oka, Nobuto ^{[1
]}

Kusayanagi, Minehide ^{[1
]}

Nakatomi, Satoshi ^{[1
]}

Shigesato, Yuzo ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Grad Sch Sci & Engn, Sagamihara, Kanagawa 2525258, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

关键词：

TRANSPORT-PROPERTIES; INDIUM OXIDE; TRANSPARENT;

D O I：

10.7567/APEX.7.105802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 x 10(19) to 1.1 x 10(21) cm(-3). A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 x 10(20) cm(-3). A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of x 10(20) cm(-3). The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 27 条

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