Potential induced degradation of n-type crystalline silicon solar cells with p+ front junction

被引：50

作者：

Bae, Soohyun ^{[1
]}

Oh, Wonwook ^{[2
]}

Lee, Kyung Dong ^{[1
]}

Kim, Seongtak ^{[1
]}

Kim, Hyunho ^{[1
]}

Park, Nochang ^{[2
]}

Chan, Sung-Il ^{[2
]}

Park, Sungeun ^{[1
]}

Kang, Yoonmook ^{[3
]}

Lee, Hae-Seok ^{[1
]}

Kim, Donghwan ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, 145 Anam Ro, Seoul, South Korea

[2] Korea Elect Technol Inst, Elect Convergence Mat & Device Res Ctr, Seongnam, South Korea

[3] Korea Univ, Grad Sch Energy & Environm, KU KIST Green Sch, 145 Anam Ro, Seoul, South Korea

来源：

ENERGY SCIENCE & ENGINEERING | 2017年 / 5卷 / 01期

关键词：

Boron-doped emitter; n-type silicon solar cell; photovoltaic module; potential induced degradation; quantum efficiency; PHOTOVOLTAIC MODULES; STACKING-FAULTS; EXPLANATION; EFFICIENCY; EMITTER;

D O I：

10.1002/ese3.146

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

N-type silicon-based solar cells are currently being used for achieving high efficiency. However, most of the photovoltaic modules already constructed are based on p-type silicon solar cells, and there are few studies on potential induced degradation (PID) in n-type solar cells. In this study, we investigated PID in n-type silicon solar cells with a front p+ emitter. Further, the PID characteristics of n-type solar cells are compared with those of p-type solar cells. The electrical properties of PID in solar cells are observed with the light I-V, quantum efficiency (QE), and electroluminescence (EL). The possible causes for the change in the external quantum efficiency (EQE) after PID are interpreted using PC1D and are discussed by comparing the experimental results with the simulation results.

引用

页码：30 / 37

页数：8

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