Optical damage in Zn:Ca:LiNbO3 waveguide substrates

被引：0

作者：

Zhao, YQ ^{[1
]}

Xu, WS ^{[1
]}

Zhang, HX ^{[1
]}

Xu, YH ^{[1
]}

Wang, JY ^{[1
]}

机构：

[1] Harbin Inst Technol, Dept Appl Chem, Harbin 150001, Peoples R China

来源：

DESIGN, FABRICATION AND CHARACTERIZATION OF PHOTONIC DEVICES | 1999年 / 3896卷

关键词：

Zn : Ga : LiNbO3 crystal; photo waveguide substrate; photo damage; proton exchange; integrated optics; refractive index; optical system; light-wave scatter; continuous laser; optical element;

D O I：

10.1117/12.370369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Doping ZnO and Ga2O3 in LiNbO3 crystal, the Zn:Ga:LiNbO3 was grown by Czochralski method. The infrared transmission spectra and the photo damage resistance ability of the LiNbO3 and Zn:Ga:LiNbO3 crystal were measured. The proton exchange technology was used to make the LiNbO3 and Zn:Ga:LiNbO3 crystal waveguide substrates. The m-line method was taken to study the photo damage of waveguide substrate. We observed that the threshold of Zn:Ga:LiNbO3 is above two magnitude higher than that of Mg:LiNbO3. Zn:Ga:LiNbO3 crystal is better performance than LiNbO3 crystal.

引用

页码：608 / 613

页数：4

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