Efficient red light phosphorescence emission in simple bi-layered structure organic devices with fluorescent host-phosphorescent guest system

被引：4

作者：

Pode, Ramchandra ^{[3
]}

Ahn, Jeung-Sun ^{[3
]}

Jeon, Woo Sik ^{[1
,2
]}

Park, Tae Jin ^{[1
,2
]}

Kwon, Jang Hyuk ^{[1
,2
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

[2] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[3] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 05期

关键词：

PHOLEDs; Simple bi-layered structure; Current and power efficiencies; ENERGY-TRANSFER; ELECTROLUMINESCENT DEVICES; HIGHLY EFFICIENT; EMITTING DEVICES; IRIDIUM COMPLEX; ELECTROPHOSPHORESCENCE; DIODES;

D O I：

10.1016/j.cap.2009.01.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly efficient red phosphorescent devices comprising a simple bi-layered structure using tris(1-phenylisoquilioline)iridium (Ir(piq)(3)) doped in a narrow band-gap fluorescent host material, bis(10-hydroxybenzo [h] quinolinato)beryllium complex (Bebq(2)) are reported. The driving voltage to reach 1000 cd/m(2) is 3.5 V in Bebq(2):Ir(piq)(3) red phosphorescent device. With a dopant concentration of as low as 4%, the current and power efficiency Values of 8.41 cd/A and 7.34 Im/W are obtained in this PHOLEDs. respectively. External quantum efficiency (EQE) of 14.5% is noticed in this red phosphorescent device, promising to high brightness applications. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

引用

页码：1151 / 1154

页数：4

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