Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

被引：12

作者：

Goto, Masaki ^{[1
]}

Amano, Ryo ^{[1
]}

Shimoda, Naotaka ^{[1
]}

Kato, Yoshimine ^{[2
]}

Teii, Kungen ^{[3
]}

机构：

[1] Kyushu Univ, Grad Sch Automot Sci, Nishi Ku, Fukuoka 8190395, Japan

[2] Kyushu Univ, Dept Mat Sci & Engn, Nishi Ku, Fukuoka 8190395, Japan

[3] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 15期

基金：

日本学术振兴会;

关键词：

PHOSPHORUS;

D O I：

10.1063/1.4871713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10(7) at room temperature and 10(4) even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures. (C) 2014 AIP Publishing LLC.

引用

页数：4

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