Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics

被引：124

作者：

You, Tiangui ^{[1
]}

Shuai, Yao ^{[2
]}

Luo, Wenbo ^{[2
]}

Du, Nan ^{[1
]}

Buerger, Danilo ^{[1
,3
]}

Skorupa, Ilona ^{[1
,3
]}

Huebner, Rene ^{[3
]}

Henker, Stephan ^{[4
]}

Mayr, Christian ^{[4
]}

Schueffny, Rene ^{[4
]}

Mikolajick, Thomas ^{[5
]}

Schmidt, Oliver G. ^{[1
,6
]}

Schmidt, Heidemarie ^{[1
]}

机构：

[1] Tech Univ Chemnitz, D-09126 Chemnitz, Germany

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[4] Tech Univ Dresden, Fac Elect Engn & Informat Technol, Inst Circuits & Syst, D-01062 Dresden, Germany

[5] NaMLab gGmbH, D-01187 Dresden, Germany

[6] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

来源：

ADVANCED FUNCTIONAL MATERIALS | 2014年 / 24卷 / 22期

关键词：

memristor; resistive switching; BiFeO3; Boolean logic functions; reconfigurable nonvolatile logics; DEVICES; DRIFT;

D O I：

10.1002/adfm.201303365

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Resistive switching devices are considered as one of the most promising candidates for the next generation memories and nonvolatile logic applications. In this paper, BiFeO3:Ti/BiFeO3 (BFTO/BFO) bilayer structures with optimized BFTO/BFO thickness ratio which show symmetric, bipolar, and nonvolatile resistive switching with good retention and endurance performance, are presented. The resistive switching mechanism is understood by a model of flexible top and bottom Schottky-like barrier heights in the BFTO/BFO bilayer structures. The resistive switching at both positive and negative bias make it possible to use both polarities of reading bias to simultaneously program and store all 16 Boolean logic functions into a single cell of a BFTO/BFO bilayer structure in three logic cycles.

引用

页码：3357 / 3365

页数：9

共 41 条

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