Formation and evolution of ripples on ion-irradiated semiconductor surfaces

被引：15

作者：

Kang, M. ^{[1
]}

Wu, J. H. ^{[1
]}

Ye, W. ^{[1
]}

Jiang, Y. ^{[1
]}

Robb, E. A. ^{[1
]}

Chen, C. ^{[1
]}

Goldman, R. S. ^{[1
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期

基金：

美国国家科学基金会;

关键词：

III-V semiconductors - Indium antimonides - Irradiation - Focused ion beams;

D O I：

10.1063/1.4863471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the formation and evolution of ripples on focused-ion-beam (FIB) irradiated compound semiconductor surfaces. Using initially normal-incidence Ga+ FIB irradiation of InSb, we tuned the local beam incidence angle (theta(eff)) by varying the pitch and/or dwell time. For single-pass FIB irradiation, increasing theta(eff) induces morphological evolution from pits and islands to ripples to featureless surfaces. Multiple-pass FIB irradiation of the rippled surfaces at a fixed theta(eff) leads to island formation on the ripple crests, followed by nanorod (NR) growth. This ripple-NR transition provides an alternative approach for achieving dense arrays of NRs. (C) 2014 AIP Publishing LLC.

引用

页数：4

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