Formation and evolution of ripples on ion-irradiated semiconductor surfaces

被引：15
|
作者：
Kang, M. [1 ]
Wu, J. H. [1 ]
Ye, W. [1 ]
Jiang, Y. [1 ]
Robb, E. A. [1 ]
Chen, C. [1 ]
Goldman, R. S. [1 ]
机构：
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 05期
基金：
美国国家科学基金会;
关键词：
III-V semiconductors - Indium antimonides - Irradiation - Focused ion beams;
D O I：
10.1063/1.4863471
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have examined the formation and evolution of ripples on focused-ion-beam (FIB) irradiated compound semiconductor surfaces. Using initially normal-incidence Ga+ FIB irradiation of InSb, we tuned the local beam incidence angle (theta(eff)) by varying the pitch and/or dwell time. For single-pass FIB irradiation, increasing theta(eff) induces morphological evolution from pits and islands to ripples to featureless surfaces. Multiple-pass FIB irradiation of the rippled surfaces at a fixed theta(eff) leads to island formation on the ripple crests, followed by nanorod (NR) growth. This ripple-NR transition provides an alternative approach for achieving dense arrays of NRs. (C) 2014 AIP Publishing LLC.
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页数：4
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