Low-Cost pH Sensors Based on Low-Voltage Oxide-Based Electric-Double-Layer Thin Film Transistors

被引：30

作者：

Liu, Ning ^{[1
,2
]}

Liu, Yanghui ^{[1
,2
]}

Zhu, Liqiang ^{[1
,2
]}

Shi, Yi ^{[1
,2
]}

Wan, Qing ^{[1
,2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Oxide-based EDL transistors; pH sensor; P-doped nanogranular SiO2 electrolyte;

D O I：

10.1109/LED.2014.2303074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium-tin-oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) are used as pH sensors. Such EDL devices show a low operation voltage of similar to 1.5 V and a high field-effect electron mobility (mu(FE)) of similar to 20 cm(2).V-1.s(-1) when phosphorous-doped nanogranular SiO2-based electrolyte films are used as the gate dielectric. The pH sensor based on such EDL TFT exhibits a high sensitivity of 58.1 mV.pH(-1) and a good linearity in the pH range from 2 to 12. In addition, such pH sensors present a low threshold voltage drift rate of 2.2 mV.h(-1) and a hysteresis voltage of 8.3 mV after a pH loop of 7 -> 4 -> 7 -> 10 -> 7.

引用

页码：482 / 484

页数：3

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