Selective Metal Deposition To Increase Productivity

被引：0

作者：

Rhoades, Robert L. ^{[1
]}

Mavliev, Rashid ^{[2
]}

Gottfried, Knut ^{[3
]}

机构：

[1] Revasum Inc, San Luis Obispo, CA 93401 USA

[2] Ipgrip Inc, Campbell, CA USA

[3] Fraunhofer ENAS, Chemnitz, Germany

来源：

2020 31ST ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC) | 2020年

关键词：

Deposition; selective; productivity; fabrication;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method for selective deposition of metal features has been developed and evaluated for several different metallization applications in device manufacturing and advanced packaging technologies. Selectroplating (R) is based on a selective chemical modification (SCM) of field areas of a wafer and can be implemented for either a fill-based integration, such as Cu dual damascene, or an additive process such as plating of wide conductive lines. In either integration, the primary benefit of selective deposition is to prevent deposition of metal in areas between desired features thus eliminating the need to remove excess bulk metal in the next step.

引用

页数：3