MANUFACTURABLE TRI-STACK ALSB/INAS HEMT LOW-NOISE AMPLIFIERS USING WAFER-LEVEL-PACKAGING TECHNOLOGY FOR LIGHT-WEIGHT AND ULTRALOW-POWER APPLICATIONS

被引：1

作者：

Chou, Y. C. ^{[1
]}

Chang-Chien, P. ^{[1
]}

Yang, J. M. ^{[1
]}

Nishimoto, M. Y. ^{[1
]}

Hennig, K. ^{[1
]}

Lange, M. D. ^{[1
]}

Zeng, X. ^{[1
]}

Parlee, M. R. ^{[1
]}

Lin, C. H. ^{[1
]}

Lee, L. S. ^{[1
]}

Nam, P. S. ^{[1
]}

Wojtowicz, M. ^{[1
]}

Barsky, M. E. ^{[1
]}

Oki, A. K. ^{[1
]}

Boos, J. B. ^{[2
]}

Bennett, B. R. ^{[2
]}

Papanicolaou, N. A. ^{[2
]}

机构：

[1] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

[2] Naval Res Lab, Washington, DC 20375 USA

来源：

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年

关键词：

wafer-level-packaging; HEMT; ultralow-power; AlSb/InAs;

D O I：

10.1109/ICIPRM.2009.5012478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wafer-level-packaging technology was used to integrate the 0.1 mu m AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable tri-stack transmit/receive modules is essential for phased-array applications requiring light weight and ultralow power.

引用

页码：200 / +

页数：2

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