Temperature and thermal conductivity modes of Scanning Probe Microscopy for electromigration studies

被引：5
|
作者：
Buck, A
Jones, BK
Pollock, HM
机构：
[1] School of Physics and Chemistry, Lancaster University, Lancaster
来源：
MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/S0026-2714(97)00094-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report here the use of Scanning Probe Microscopy (SPM) in two thermal modes, as well as the usual topographical mode, for the study of samples which have suffered electromigration damage. The temperature mode displays hot spots in the samples, under current bias, where there is a large void in the track and hence large local heating. The thermal conductivity mode can detect large voids in the track even beneath a passivation layer. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：1495 / 1498
页数：4
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