Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

被引：12
作者：
Maximov, I
Carlberg, P
Wallin, D
Shorubalko, I
Seifert, W
Xu, HQ
Montelius, L
Samuelson, L
机构：
[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden
[2] Lund Univ, Nanometre Consortium, S-22100 Lund, Sweden
来源：
NANOTECHNOLOGY | 2002年 / 13卷 / 05期
关键词：
Electron beam lithography - Electron gas - Electron transport properties - Oxygen - Plasmas - Reactive ion etching - Scanning electron microscopy - Semiconducting indium gallium arsenide - Semiconducting indium phosphide - Silica;
D O I：
10.1088/0957-4484/13/5/325
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.
引用
收藏
页码：666 / 668
页数：3
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