Dielectric and Ferroelectric Properties of Nd and Nd/Nb Doped Bismuth Titanate Ceramics

被引：4

作者：

Kim, Jin Soo ^{[2
]}

Choi, Byung Chun ^{[2
]}

Jeong, Jung Hyun ^{[2
]}

Lee, Kwang-Sei ^{[1
]}

Cho, Sang-Bock ^{[3
]}

机构：

[1] Inje Univ, Dept Nano Syst Eng, Ctr Nano Mfg, Gimhae 621749, Gyeongnam, South Korea

[2] Pukyong Natl Univ, Dept Phys, Pusan 608737, South Korea

[3] Univ Ulsan, Sch Elect Eng, Ulsan 680749, South Korea

来源：

FERROELECTRICS | 2009年 / 384卷

关键词：

FRAM; BIT; BLSF; dielectric; ferroelectric; Nd and Nb doping; BI4TI3O12; THIN-FILMS; ELECTRICAL-PROPERTIES; SRBI2TA2O9; DISPERSION; ION; LA;

D O I：

10.1080/00150190902892972

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nd/Nb doped Bi4Ti3O12, Bi3.2Nd0.8Ti3-xNbxO12 (x = 0.0 similar to 0.15) ceramics, were synthesize by solid state reaction method. The effect of Nb doping on dielectric and ferroelectric properties were investigated. Nb doping decreased the Curie temperature and strong low-frequency dielectric dispersion of Bi4Ti3O12. With increasing Nb doping, the remnant polarization, P-r, increased up to x = 0.05 and the maximum P-r reach to 12.05 mu C/cm(2), which is higher than that of Bi4Ti3O12 of 5.2 mu C/cm(2). The appropriate Nb doping decreased the conductivity and improved the ferroelectric properties.

引用

页码：106 / 112

页数：7

共 20 条

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