Microstructure in nonpolar m-plane GaN and AlGaN films

被引：8

作者：

Nagai, T. ^{[1
]}

Kawashima, T. ^{[1
]}

Imura, M. ^{[1
]}

Iwaya, M. ^{[1
]}

Kamiyama, S. ^{[1
]}

Amano, H. ^{[1
]}

Akasaki, I. ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Century COE Program Nano Factory 21st, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷

关键词：

m-plane GaN; epitaxial lateral overgrowth (ELO); metal-organic vapor phase epitaxy; group-III nitrides; transmission electron microscopy (TEM);

D O I：

10.1016/j.jcrysgro.2006.10.029

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A microstructural analysis of m-plane GaN and AlGaN layers grown by metal-organic vapor phase epitaxy using the epitaxial lateral overgrowth method was carried out. It was difficult to reduce stacking fault density when stripes were formed along the < 0 0 0 1 > direction, which implies that stacking faults originate from c-plane slip. In the case of stripes along the, < 11 (2) over bar0 > directions, both stacking fault and threading dislocation densities can be reduced. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：288 / 292

页数：5

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