Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm

被引:31
作者
Bachmann, Alexander [1 ]
Arafin, Shamsul [1 ]
Kashani-Shirazi, Kaveh [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源
NEW JOURNAL OF PHYSICS | 2009年 / 11卷
关键词
VERTICAL-CAVITY LASERS; TUNNEL-JUNCTIONS; TEMPERATURE; OPERATION; ALLOYS; SEMICONDUCTORS; RESISTANCE; OXIDATION; SURFACES; CONTACTS;
D O I
10.1088/1367-2630/11/12/125014
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Vertical-cavity surface-emitting lasers (VCSELs) are perfect light sources for spectroscopic applications, where properties such as continuous-wave (cw) operation, single-mode emission, high lifetime and often low power consumption are crucial. For applications such as tunable diode laser absorption spectroscopy (TDLAS), there is a growing interest in laser devices emitting in the near-to mid-infrared wavelength range, where many environmentally and technologically important gases show strong absorption lines. The (AlGaIn)(AsSb) material system based on GaSb is the material of choice for covering the 2.0-3.3 mu m range. In this paper, we report on electrically pumped single-mode VCSELs with emission wavelengths of 2.4 and 2.6 mu m, operating cw at room temperature and beyond. By (electro-) thermal tuning, the emission wavelength can be tuned mode-hop free over a range of several nanometers. In addition, low threshold currents of several milliamperes promise mobile application. In the devices, a structured buried tunnel junction with subsequent overgrowth has been used in order to achieve efficient current confinement, reduced optical losses and increased electrical conductivity. Furthermore, strong optical confinement is introduced in the lasers due to laterally differing cavity lengths.
引用
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页数:17
相关论文
共 36 条
[1]  
ARAFIN S, 2009, P SEM INT O IN PRESS, P25013
[2]   Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3 μm [J].
Bachmann, A. ;
Lim, T. ;
Kashani-Shirazi, K. ;
Dier, O. ;
Lauer, C. ;
Amann, M. -C. .
ELECTRONICS LETTERS, 2008, 44 (03) :202-U12
[3]  
BACHMANN A, 2008, IEEE 21 SEM LAS C, P39
[4]   Atomic hydrogen cleaning of polar III-V semiconductor surfaces [J].
Bell, GR ;
Kaijaks, NS ;
Dixon, RJ ;
McConville, CF .
SURFACE SCIENCE, 1998, 401 (02) :125-137
[5]  
CHEN J, 2009, C LAS EL 2009 BALT M, P25013
[6]   DESIGN OF FABRY-PEROT SURFACE-EMITTING LASERS WITH A PERIODIC GAIN STRUCTURE [J].
CORZINE, SW ;
GEELS, RS ;
SCOTT, JW ;
YAN, RH ;
COLDREN, LA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1513-1524
[7]   Selective and non-selective wet-chemical etchants for GaSb-based materials [J].
Dier, O ;
Lin, C ;
Grau, M ;
Amann, MC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (11) :1250-1253
[8]   n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity [J].
Dier, O. ;
Lauer, C. ;
Amann, M. -C. .
ELECTRONICS LETTERS, 2006, 42 (07) :419-420
[9]   Effects of thermal annealing on the band gap of GaInAsSb [J].
Dier, O ;
Dachs, S ;
Grau, M ;
Lin, C ;
Lauer, C ;
Amann, MC .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
[10]   Diffusion of dopants in highly (∼1020 CM-3) n- and p-doped GaSb-based materials [J].
Dier, O ;
Grau, M ;
Lauer, C ;
Lin, C ;
Amann, MC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (02) :349-353