Intense photoluminescence from erbium-doped tantalum oxide thin films deposited by sputtering

被引：6

作者：

Singh, Mayank Kumar ^{[1
]}

Fusegi, Genjoh ^{[1
]}

Kano, Kazusa ^{[1
]}

Bange, Jaspal Parganram ^{[2
]}

Miura, Kenta ^{[1
]}

Hanaizumi, Osamu ^{[1
]}

机构：

[1] Gunma Univ, Grad Sch Engn, Kiryu, Gunma 3768515, Japan

[2] Gunma Univ, Adv Technol Res Ctr, Kiryu, Gunma 3768515, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2009年 / 6卷 / 23期

基金：

日本学术振兴会;

关键词：

erbium; tantalum oxide; photoluminescence; annealing; sputtering; FLUORESCENCE; EMISSION;

D O I：

10.1587/elex.6.1676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Erbium-doped tantalum oxide films were prepared by radio-frequency magnetron sputtering. Visible light emission was observed from the films after annealing. We obtained PL peaks at 550 and 670 nm. The effects of erbium concentration, annealing temperature, and annealing time on the light-emitting properties of the films are discussed. The strongest intensities of the 550 and 670 nm peaks were observed from the samples with 0.96 and 0.63 mol% erbium concentrations after annealing at 900 degrees C for 20 min, respectively.

引用

页码：1676 / 1682

页数：7

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