An 8-mW, ESD-protected, CMOS LNA for ultra-wideband applications

被引：8
|
作者：
Bhatia, Karan [1 ]
Hyvonen, Sami [1 ]
Rosenbaum, Elyse [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2006年
关键词：
D O I：
10.1109/CICC.2006.320955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A common-gate, 7.9mW, ESD-protected, CMOS Ultra-Wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S-21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (34dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz.
引用
收藏
页码：385 / 388
页数：4
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