An 8-mW, ESD-protected, CMOS LNA for ultra-wideband applications

被引：8

作者：

Bhatia, Karan ^{[1
]}

Hyvonen, Sami ^{[1
]}

Rosenbaum, Elyse ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

D O I：

10.1109/CICC.2006.320955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A common-gate, 7.9mW, ESD-protected, CMOS Ultra-Wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S-21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (34dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz.

引用

页码：385 / 388

页数：4

共 12 条

[1] ALLSTOT DJ, 2004, RAD FREQ INT CIRC RF, P97
[2] Amerasekera A., 2002, ESD SILICON INTEGRAT, V2nd
[3] Barth JE, 2001, IEEE T ELECTRON PA M, V24, P99, DOI 10.1109/6104.930960
[4] An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers
Bevilacqua, A
Niknejad, AM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (12) : 2259 - 2268
[5] Chehrazi S, 2005, IEEE CUST INTEGR CIR, P801
[6] A broadband low-noise front-end amplifier for ultra wideband in 0.13-μm CMOS
Gharpurey, R
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (09) : 1983 - 1986
[7] HYVONEN S, 2005, P EOS ESD S, P9
[8] Liao CF, 2005, IEEE CUST INTEGR CIR, P161
[9] Maloney T., 1985, P EOS ESD S, P49
[10] Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 Ghz) in a 0.18um CMOS process
Richier, C
Salome, P
Mabboux, G
Zaza, I
Juge, A
Mortini, P
[J]. ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 2000, 2000, : 251 - 259

← 1 2 →