An 8-mW, ESD-protected, CMOS LNA for ultra-wideband applications

被引：8

作者：

Bhatia, Karan ^{[1
]}

Hyvonen, Sami ^{[1
]}

Rosenbaum, Elyse ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

D O I：

10.1109/CICC.2006.320955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A common-gate, 7.9mW, ESD-protected, CMOS Ultra-Wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S-21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (34dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz.

引用

页码：385 / 388

页数：4

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